Tegal 901ACS & 903ACS RF Diode Etch


Tegal 901ACS and 903ACS Etch Introduction

Industry Leader in Cost of Ownership 901ACS and 903ACS RF Diode Etch Tool

The 901ACS and 903ACS are the market leaders in non-critical dielectric etch and photoresist trim processing for the semiconductor industry. The wide gap RF diode reactor of the 901ACS is ideally suited to low temperature plasma etch for delicate organic materials and damage sensitive devices without the complication of wafer clamps or electrostatics chucks. The narrow gap 903ACS is the best value for plasma anisotropic etch of silicon oxide and silicon nitride materials for non-critical via and pad passivation etch. Applications for the 901ACS and 903ACS serve the traditional CMOS and Bipolar silicon semiconductor industry in addition to GaAs, InP and SiGe compound semiconductors; MEMS; advanced packaging; thin film head; and Bio-Chip nanotechnology.


  • Silicon Nitride and Silicon Dioxide thin film etch
  • Silicon Carbide etch
  • Resist trim and descum clean at low temperature
  • Plasma surface treatment

Features and Specifications:

  • 3 inch, 100 mm, 125 mm, and 150 mm wafer handling (Also suitable for up to 4 inch x 4 inch square substrates)
  • Suitable for transparent, insulating, and thinned substrates
  • Small footprint with no external rack electronics
  • Simple fixed gap RF Diode source
  • Cassette-to-Cassette wafer handling
  • Temperature controlled electrodes
  • Graphical User Interface with LCD touchscreen monitor
  • Built in data logging and graphing
  • SECS/GEM factory automation support


  • High throughput for low cost of ownership
  • Low consumable parts cost
  • Relieves capacity burden on critical etch tools
  • OEM Group commitment to improvements and upgrades

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